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| MRF892 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF892 is Designed for Class AB, Cellular Base Station Applications up to 900 MHz. PACKAGE STYLE .230 6L FLG A .040x45 4X .025 R .115 .430 D E .125 G H I L F C B 2XO.130 FEATURES: * Internal Input Matching Network * PG =8.5 dB at 14 W/900 MHz * OmnigoldTM Metalization System MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG JC 2.5 A DIM MINIMUM inches / mm JK MAXIMUM inches / mm 50 V 30 V 4.0 V 50 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 3.5 C/W A B C D E F G H I J K L .355 / 9.02 .115 / 2.92 .075 / 1.91 .225 / 5.72 .090 / 2.29 .720 / 18.29 .970 / 24.64 .355 / 9.02 .004 / 0.10 .120 / 3.05 .160 / 4.06 .230 / 5.84 .365 / 9.27 .125 / 3.18 .085 / 2.16 .235 / 5.97 .110 / 2.79 .730 / 18.54 .980 / 24.89 .365 / 9.27 .006 / 0.15 .130 / 3.30 .180 / 4.57 .260 / 6.60 CHARACTERISTICS SYMBOL BVCES BVCEO BVEBO ICBO hFE COB PG C IC = 25 mA IC = 25 mA IE = 5.0 mA VCB = 30 V VCE = 5.0 V VCB = 30 V VCC = 24 V TC = 25C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 50 30 4.0 2.0 UNITS V V V mA --pF dB % IC = 1.0 A f = 1.0 MHz POUT = 15 W f = 960 MHz 10 12.5 8.5 55 9.5 60 100 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/1 |
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